PART |
Description |
Maker |
HY29F400BT45 HY29F400TR90 HY29F400TT HY29F400TG55 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
|
HYNIX[Hynix Semiconductor]
|
AM29LV400B-100WAC |
EEPROM,FLASH,256KX16/512KX8,CMOS,BGA,48PIN,PLASTIC From old datasheet system
|
AMD Inc
|
AT49BV4096A-12RC |
EEPROM,FLASH,256KX16/512KX8,CMOS,SOP,44PIN,PLASTIC From old datasheet system
|
Atmel Corp
|
MX26LV400TXBC-55G MX26LV400BXBC-70G MX26LV400TXBC- |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
MACRONIX INTERNATIONAL CO LTD Macronix International Co., Ltd. http://
|
K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http:// SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8)的CMOS掩模ROM分位512Kx8)的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
EM39LV040-90FDI EM39LV040-55FDI EM39LV040-45RFDI E |
39514262 4M (512Kx8) Bits Flash Memory 4分(512Kx8)位快闪记忆
|
ELAN Microelctronics Corp . Elan Microelectronics, Corp.
|
KM23C4000DTY KM23C4000DETY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
S25FL001D0FNAI013 S25FL001D0FNFI001 S25FL001D0FNFI |
2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
|
SPANSION[SPANSION]
|
WS512K8-45CQ WS512K8-45CMA WS512K8-XCX WS512K8-25C |
From old datasheet system 512Kx8 SRAM MODULE / SMD 5962-92078 512Kx8 SRAM MODULE, SMD 5962-92078
|
List of Unclassifed Manufacturers ETC[ETC] White Electronic Designs
|
STK14EC16-BF15I STK14EC16-BF15ITR STK14EC16-BF15TR |
256Kx16 AutoStore nvSRAM
|
Simtek Corporation
|